? semiconductor components industries, llc, 2005 december, 2005 ? rev. 1 1 publication order number: 2n5400/d 2n5400, 2N5401 preferred device amplifier transistors pnp silicon features ? pb?free packages are available* maximum ratings rating symbol 2n5400 2N5401 unit collector ? emitter v oltage v ceo 120 150 vdc collector ? base voltage v cbo 130 160 vdc emitter ? base voltage v ebo 5.0 vdc collector current ? continuous i c 600 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum rat ings applied to the device are individual stress limit values (not nor- mal operating conditions) and are not valid simultaneously. if these limits are ex- ceeded, device functional operation is not implied, damage may occur and reli- ability may be af fected. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient r ja 200 c/w thermal resistance, junction?to?case r jc 83.3 c/w 2n 540x ayww a = assembly location y = year ww = work week = pb?free package (note: microdot may be in either location) marking diagram to?92 case 29 style 1 1 2 3 preferred devices are recommended choices for future use and best overall value. see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information http://onsemi.com *for a dditional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. collector 3 2 base 1 emitter
2n5400, 2N5401 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector? emitter breakdown voltage (1) (i c = 1.0 madc, i b = 0) 2n5400 2N5401 v (br)ceo 120 150 ? ? vdc collector? base breakdown voltage (i c = 100 adc, i e = 0) 2n5400 2N5401 v (br)cbo 130 160 ? ? vdc emitter? base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 ? vdc collector cutoff current (v cb = 100 vdc, i e = 0) 2n5400 (v cb = 120 vdc, i e = 0) 2N5401 (v cb = 100 vdc, i e = 0, t a = 100 c) 2n5400 (v cb = 120 vdc, i e = 0, t a = 100 c) 2N5401 i cbo ? ? ? ? 100 50 100 50 nadc adc emitter cutoff current (v eb = 3.0 vdc, i c = 0) i ebo ? 50 nadc on characteristics (note 1) dc current gain (i c = 1.0 madc, v ce = 5.0 vdc) 2n5400 2N5401 (i c = 10 madc, v ce = 5.0 vdc) 2n5400 2N5401 (i c = 50 madc, v ce = 5.0 vdc) 2n5400 2N5401 h fe 30 50 40 60 40 50 ? ? 180 240 ? ? ? collector? emitter saturation v oltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v ce(sat) ? ? 0.2 0.5 vdc base? emitter saturation v oltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v be(sat) ? ? 1.0 1.0 vdc small?signal characteristics current? gain ? bandwidth product (i c = 10 madc, v ce = 10 vdc, f = 100 mhz) 2n5400 2N5401 f t 100 100 400 300 mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo ? 6.0 pf small?signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) 2n5400 2N5401 h fe 30 40 200 200 ? noise figure (i c = 250 adc, v ce = 5.0 vdc, r s = 1.0 k , f = 1.0 khz) nf ? 8.0 db 1. pulse test: pulse width 300 s, duty cycle 2.0%.
2n5400, 2N5401 http://onsemi.com 3 figure 1. dc current gain i c , collector current (ma) 30 100 150 200 0.1 h , current gain 0.5 2.0 3.0 10 0.2 0.3 20 1.0 5.0 fe t j = 125 c 25 c ?55 c 70 50 20 30 50 100 v ce = ? 1.0 v v ce = ? 5.0 v figure 2. collector saturation region i b , base current (ma) 1.0 0.1 0.5 2.0 10 0.2 1.0 5.0 20 50 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 figure 3. collector cut?off region v be , base?emitter voltage (volts) v ce , collector?emitter voltage (volts) , collector current (a) i c 10 3 0.1 0.3 0.2 10 2 10 1 10 0 10 ?1 10 ?2 10 ?3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 i c = 1.0 ma 10 ma 30 ma 100 ma v ce = 30 v i c = i ces t j = 125 c 75 c 25 c reverse forward
2n5400, 2N5401 http://onsemi.com 4 figure 4. ?on? voltages i c , collector current (ma) 0.4 0.6 0.7 1.0 0.2 figure 5. temperature coefficients i c , collector current (ma) v, voltage (volts) 0 t j = 25 c v ce(sat) @ i c /i b = 10 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 c, capacitance (pf) 100 t j = 25 c c ibo figure 6. switching t ime test circuit v r , reverse voltage (volts) 0.9 0.8 0.5 0.3 0.1 v be(sat) @ i c /i b = 10 0.3 3.0 30 v , temperature coefficient (mv/ c) figure 7. capacitances 10.2 v v in 10 s input pulse v bb +8.8 v 100 r b 5.1 k 0.25 f v in 100 1n914 v out r c v cc ?30 v 3.0 k t r , t f 10 ns duty cycle = 1.0% values shown are for i c @ 10 ma 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.3 3.0 30 2.0 1.5 1.0 0.5 0 ?0.5 ?1.0 ?1.5 ?2.0 ?2.5 t j = ? 55 c to 135 c vc for v ce(sat) vb for v be(sat) c obo 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 0.2 0.5 1.0 2.0 5.0 10 20 0.3 3.0 0.7 7.0 t, time (ns) 1000 100 200 300 500 700 10 20 30 50 70 0.2 0.5 1.0 2.0 5.0 10 20 0.3 3.0 30 50 100 200 i c , collector current (ma) figure 8. turn?on time i c /i b = 10 t j = 25 c t d @ v be(off) = 1.0 v v cc = 120 v t r @ v cc = 30 v t r @ v cc = 120 v t, time (ns) 2000 100 200 300 500 700 20 30 50 70 0.2 0.5 1.0 2.0 5.0 10 20 0.3 3.0 30 50 100 200 i c , collector current (ma) figure 9. t urn?off time 1000 t f @ v cc = 120 v t f @ v cc = 30 v t s @ v cc = 120 v i c /i b = 10 t j = 25 c
2n5400, 2N5401 http://onsemi.com 5 ordering information device package shipping ? 2n5400 to?92 5000 unit / bulk 2n5400g to?92 (pb?free) 5000 unit / bulk 2n5400rlrp to?92 2000 tape & reel 2n5400rlrpg to?92 (pb?free) 2000 tape & reel 2N5401 to?92 5000 unit / bulk 2N5401g to?92 (pb?free) 5000 unit / bulk 2N5401rl1 to?92 2000 tape & reel 2N5401rl1g to?92 (pb?free) 2000 tape & reel 2N5401rlra to?92 2000 tape & reel 2N5401rlrag to?92 (pb?free) 2000 tape & reel 2N5401rlrm to?92 2000 tape & ammo box 2N5401rlrmg to?92 (pb?free) 2000 tape & ammo box 2N5401zl1 to?92 2000 tape & ammo box 2N5401zl1g to?92 (pb?free) 2000 tape & ammo box ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifica- tions brochure, brd801 1/d.
2n5400, 2N5401 http://onsemi.com 6 package dimensions style 1: pin 1. emitter 2. base 3. collector to?92 case 29?11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 ??? 12.70 ??? l 0.250 ??? 6.35 ??? n 0.080 0.105 2.04 2.66 p ??? 0.100 ??? 2.54 r 0.115 ??? 2.93 ??? v 0.135 ??? 3.43 ??? 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, in cluding without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different a pplications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical e xperts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc prod uct could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney f ees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was neglig ent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 2n5400/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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